JEDEC Wide Bandgap Power Semiconductor Committee Publishes Its First Document: Test Method for Dynamic Resistance of GaN HEMT

ARLINGTON, Va.–(BUSINESS WIRE)–JEDEC
Solid State Technology Association
, the global leader in standards
development for the microelectronics industry, announces the publication
of JEP173: Dynamic On-Resistance Test Method Guidelines for GaN HEMT
Based Power Conversion Devices. The first publication developed by
JEDEC’s newest main committee, JC-70 Wide Bandgap Power Electronic
Conversion Semiconductors, JEP173 is available for free download from
the JEDEC
website
.

JEP173 addresses a key need of the user community of GaN power FETs,
namely a method for the consistent measurement of Drain-to-Source
Resistance in the ON-state (RDS(ON)) encompassing dynamic
effects. These dynamic effects are characteristic of GaN power FETs, and
the value of the resulting measured RDS(ON) is method
dependent.

“JEP173 demonstrates how quickly the GaN industry came together to
address this important topic and begin to establish standards across
suppliers for datasheet, qualification, and test methods,” noted
Stephanie Watts Butler, technology innovation architect at Texas
Instruments and the chair of JC-70. “The release of JEP173 will help
accelerate industry-wide adoption of GaN by ensuring consistency across
the supplier base.”

Formed in October 2017 with twenty-three member companies, JC-70 now has
over fifty member companies, which underscores industry interest in the
development of universal standards to help advance the adoption of wide
bandgap (WBG) power technologies. Global multinational corporations and
technology startups from the US, Europe, Middle East, and Asia are
working together to bring to the industry a set of standards for
reliability, testing, and parametrics of WBG power semiconductors.
Committee members include industry leaders in power GaN and SiC
semiconductors, as well as prospective users of wide bandgap power
devices, and test and measurement equipment suppliers. Technical experts
from universities and national labs also provided inputs into the new
JEP173 guideline.

“Strong commitment from the committee members was required to complete
this work to set up universal standards to help advance the adoption of
wide bandgap (WBG) power technologies,” remarked Tim McDonald, Senior
Advisor to Infineon’s CoolGaNTM program and the chair of the
JC-70.1 subcommittee. “Our Task Groups are diligently making progress on
other key GaN and SiC guidelines in the areas of test, reliability, and
datasheets.”

Interested companies worldwide are welcome to join JEDEC to participate
in this important standardization effort. JC-70 plans to hold four
committee meetings in 2019, including a meeting co-located with the APEC
Conference on March 18.

Contact Emily Desjardins ([email protected])
for more information or visit www.jedec.org.

About JEDEC

JEDEC is the global leader in the development of standards for the
microelectronics industry. Thousands of volunteers representing nearly
300 member companies work together in over 100 JEDEC committees and task
groups to meet the needs of every segment of the industry, manufacturers
and consumers alike. The publications and standards generated by JEDEC
committees are accepted throughout the world. All JEDEC standards are
available for download from the JEDEC website. For more information,
visit www.jedec.org.

Contacts

Emily Desjardins
703-907-7560
[email protected]

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